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2SK3947
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK3947
Switching Regulator Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ C C Unit V V V
1: Gate 2: Drain 3: Source
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W 1
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.8 mH, IAR = 6 A, RG = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3947
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 3 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VGS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 30 600 2.0 1.2 Typ. 1.1 5.0 1050 10 110 20 40 35 130 28 16 12 Max 10 100 4.0 1.4 pF Unit A V A V V S

ns
RL = 66 VDD 200 V -

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 140 0.3 Max 6 24 -1.7 Unit A A V ns C
Marking
K3947
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3947
ID - VDS
5 10 15 4 6 Common source Ta = 25C Pulse test 10 10 15 8 6
ID - VDS
Common source Ta = 25C Pulse test
(A)
ID
ID Drain current
4.8
(A)
6 4
5 3
Drain current
2
4.6 4.4 4.2 VGS = 4 V 0 2 4 6 8 10
5 4.8
1
2
4.6 4.4 4.2 40 50
0
0
VGS = 4 V 0 10 20 30
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
10 Common source VDS = 10 V Pulse test 10
VDS - VGS
Common source Ta = 25C Pulse test ID = 6 A 6
8
(V)
Ta = -55C 100 25
8
ID (A)
4
Drain-source voltage
6
Drain current
VDS
4
3
2
2
1.5
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
10 10 Common source VDS = 20 V Pulse test Ta = -55C 100 25 Common source Ta = 25C Pulse test
RDS (ON) - ID
Forward transfer admittance Yfs (S)
Drain-source ON-resistance RDS (ON) ()
VGS = 10,15 V 1
1
0.1 0. 1
1
10
0.1 0.1
1
10
Drain current ID (A)
Drain current ID (A)
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2SK3947
RDS (ON) - Ta
5 Common source Pulse test VGS = 10V 10 Common source Ta = 25C Pulse test
IDR - VDS
3
Drain reverse current IDR (A)
4
Drain-source ON-resistance RDS (ON) ( )
1 5
2
ID = 6A 3
1.5 1
10 3 1 VGS = 0, -1 V 0.8 1.2 1.6 2.0
0 -80
-40
0
40
80
120
160
0.1
0
0.4
Ambient temperature Ta (C)
Drain-source voltage
VDS
(V)
10000
Capacitance - VDS
Vth - Ta
4
Ciss
(pF)
Capacitance C
100
Coss
Gate threshold voltage Vth (V)
1000
3
2
10
Common source VGS = 0 V f = 1 MHz Ta = 25C
Crss
1
Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
1 0.1
1
10
100
0 -80
Drain-source voltage
VDS (V)
Ambient temperature Ta (C)
PD - Ta Tc
50 500
Dynamic input / output characteristics
20
(V)
Drain power dissipation PD (W)
VDS
40
400
VDS
16 VDD = 100 V 200 12
20
200 VGS 100
400 Common source ID = 6 A Tc = 25C Pulse test
8
10
4
0 0
40
80
120
160
200
0
0
10
20
30
40
50
0
Ambient temperature Ta (C)
Total gate charge Qg (nC)
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Gate-source voltage
30
Drain-source voltage
300
VGS (V)
2SK3947
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1
Duty = 0.5 0.2
0.1
0.1 0.05 0.02 PDM Single pulse 0.01 t T Duty = t/T Rth (ch-c) = 3.125C/W
0.01
0.001 10
100
1
10
100
1
10
Pulse width
tw
(s)
Safe operating area
100 ID max (pulsed) * 100 s * 10 ID max (continuous) * 1 ms * 1 DC operation Ta = 25C 400 500
EAS - Tch
Avalanche energy EAS (mJ)
ID
(A)
300
200
Drain current
100 * Single nonrepetitive pulse 0.1 Ta = 25 Curves must be derated linearly with increase in temperature 0.01 1 10 100 1000 VDSS max 0 25 50 75 100 125 150
Channel temperature (initial) Tch (C) BVDSS IAR VDD Test circuit RG = 25 VDD = 90 V, L = 16.8 mH Waveform VDS
Drain - Source Voltage VDS (V)
15 V -15 V
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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